The team has developed a polytelluroxane-based photoresist to address problems like reflection loss and defect-prone materials. Traditional photoresists rely on complex chemical amplification or metal clusters, but the new process integrates high-absorption tellurium with Te–O bonds for superior sensitivity, uniformity, and minimal defects. It’s a single-component, small-molecule design that offers higher energy efficiency and lower line edge roughness needed for advanced chips. The breakthrough could accelerate China’s semiconductor self-reliance, reducing dependency on foreign EUV tech.